List of Publications

 

 

2023

 

Ultra-narrow inhomogeneous spectral distribution of telecom-wavelength vanadium centres in isotopically-enriched silicon carbide

Pasquale Cilibrizzi, Muhammad Junaid Arshad, Benedikt Tissot, Nguyen Tien Son, Ivan G. Ivanov, Thomas Astner, Philipp Koller, Misagh Ghezellou, Jawad Ul-Hassan, Daniel White, Christiaan Bekker, Guido Burkard, Michael Trupke, Cristian Bonato

arXiv:2305.01757 (2023)

 

Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithography

Christiaan Bekker, Muhammad Junaid Arshad, Pasquale Cilibrizzi, Charalampos Nikolatos, Peter Lomax, Graham S. Wood, Rebecca Cheung, Wolfgang Knolle, Neil Ross, Brian Gerardot, Cristian Bonato

Appl. Phys. Lett. 122, 173507 (2023)

 

Recent advances in the ab initio theory of solid-state defect qubits
Ádám Gali
Nanophotonics 12, 359-397 (2023).

 

A Telecom O-Band Emitter in Diamond
Sounak Mukherjee, Zi-Huai Zhang, Daniel G. Oblinsky, Mitchell O. de Vries, Brett C. Johnson, Brant C. Gibson, Edwin L. H. Mayes, Andrew M. Edmonds, Nicola Palmer, Matthew L. Markham, Ádám Gali, Gergô Thiering, Adam Dalis, Timothy Dumm, Gregory D. Scholes, Alastair Stacey, Philipp Reineck, and Nathalie P. de Leon
Nano Letters 23, 2557-2562 (2023).

 

Carbon cluster emitters in silicon carbide
Pei Li, Péter Udvarhelyi, Song Li, Bing Huang, and Adam Gali
Physical Review B 108, 085201 (2023).

 

Positively charged carbon vacancy defect as a near-infrared emitter in 4H-SiC
Meysam Mohseni, Péter Udvarhelyi, Gergô Thiering, and Adam Gali
Physical Review Materials 7, 096202 (2023).

 

Isotope-Purification-Induced Reduction of Spin-Relaxation and Spin-Coherence Times in Sem iconductors

Oscar Bulancea-Lindvall, Matthew T. Eiles, Nguyen Tien Son , Igor A. Abrikosov, and Viktor Ivády

Physical Review Applied 19, 064046 (2023).

 

 

2022

Nuclear spin quantum memory in silicon carbide

Benedikt Tissot, Michael Trupke, Philipp Koller, Thomas Astner, and Guido Burkard

Phys. Rev. Research 4, 033107 (2022)

 

Optimization of etching processes for the fabrication of smooth silicon carbide membranes for applications in quantum technology

Mahsa Mokhtarzadeh, Maria Carulla, Roksolana Kozak, Christian David

ScienceDirect, Vol. 16, 100155 (2022)

 

Coherent spin dynamics of hyperfine-coupled vanadium impurities in silicon carbide

Joop Hendriks, Carmem M. Gilardoni, Chris Adambukulam, Arne Laucht, Caspar H. van der Wal

arXiv:2210.09942 (2022)

 

Silicon Carbide Photonics Bridging Quantum Technology

Stefania Castelletto, Alberto Peruzzo, Cristian Bonato, Brett C. Johnson, Marina Radulaski, Haiyan Ou, Florian Kaiser, and Joerg Wrachtrup

ACS Photonics, 9, 5, 1434–1457 (2022)

 

Fabrication and nanophotonic waveguide integration of silicon carbide colour centres with preserved spin-optical coherence

Charles Babin, Rainer Stöhr, Naoya Morioka, Tobias Linkewitz, Timo Steidl, Raphael Wörnle, Di Liu, Erik Hesselmeier, Vadim Vorobyov, Andrej Denisenko, Mario Hentschel, Christian Gobert, Patrick Berwian, Georgy V. Astakhov, Wolfgang Knolle, Sridhar Majety, Pranta Saha, Marina Radulaski, Nguyen Tien Son, Jawad Ul-Hassan, Florian Kaiser & Jörg Wrachtrup

Nature Materials, 21, 67-73 (2022).

 

Scalable fabrication of hemispherical solid immersion lenses in silicon carbide through grayscale hard-mask lithograph

Christian Bekker, Muhammad Junaid Arshad, Pasquale Cilibrizzi, Charalampos Nikolatos, Peter Lomax, Graham S. Wood, Rebecca Cheung, Wolfgang Knolle, Neil Ross, Brian Gerardot, Cristian Bonato

arXiv:2301.07705 (2022).

 

Five-second coherence of single spin with single-shot readout in silicon carbide
Christopher P. Anderson, Elena O. Glen, Cyrus Zeledon, Alexandre Bourassa, Yu Jin, Yizhi Zhu,Christian vorwerk, Alexander L. Crook, Hiroshi Abe, Jawad Ul-Hassan, Takeshi Ohshima, Nguyen Tien Son, Giulia Galli & David D. Awschalom

Science advances, Vol 8, issue 5 (2022).

 

Spin-Optical Dynamics and Quantum Efficiency of Single V1 center in Silicon Carbide
Naoya Morioka, Di Liu, Öney O. Soykal, Izel Gediz, Charles Babin, Takeshi Ohshima, Nguyen Tien Son, Jawad Ul-Hassan, Florian Kaiser, and Jörg Wrachtrup

Phys. Rev. Applied 17, 054005 (2022).

 

Electromagnetically induced transparency in inhomogeneously broadened divacancy defect ensembles in SiC

Olger V. Zwier, Tom Bosma, Carmem M. Gilardoni, Xu Yang, Alexander R. Onur, Takeshi Ohshima, Nguyen T. Son, and Caspar H. van der Wal

Journal of Applied Physics 131, 094401 (2022).

Broadband single-mode planar waveguides in monolithic 4H-SiC

Tom Bosma, Joop Hendriks, Misagh Ghezellou, Nguyen T. Son, Jawad Ul-Hassan, and Caspar H. van der Wal

Journal of Applied Physics 131, 025703 (2022).

 

The silicon vacancy centers in SiC: determination of intrinsic spin dynamics for integrated quantum photonics

Di Liu, Florian Kaiser, Vladislav Bushmakin, Erik Hesselmeier, Timo Steidl, Takeshi Ohshima, Nguyen Tien Son, Jawad Ul-Hassan, Öney O. Soykal, Jörg Wrachtrup

arXiv:2307.13648;

Modified divacancies in 4H-SiC

N. T. Son, D. Shafizadeh, T. Ohshima, and I. G. Ivanov

Journal of Applied Physics 132, 025703 (2022).

 

Fluorescence spectrum and charge state control of divacancy qubits via illumination at elevated temperatures in 4H silicon carbide

A. Csóré, I. G. Ivanov, N. T. Son, and A. Gali

Physical Review B 105, 165108 (2022).

 

 

2021

 

Spin structure and resonant driving of spin-1/2 defects in SiC
Benedikt Tissot and Guido Burkard
Phys. Rev. B 103, 064106 (2021).

 

Deep levels related to the carbon antisite-vacancy pair in 4H-SiC

Hiroki Nakane, Masashi Kato, Yutaro Ohkouchi, Xuan Thang Trinh, Ivan G. Ivanov, Takeshi Ohshima, and Nguyen Tien Son  Appl. Phys. Lett. 130, 065703 (2021).

 

Charge state of silicon vacancy and divacancy in silicon carbide
Nguyen T. Son and Ivan G. Ivanov
Appl. Phys. Lett. 129, 215702 (2021).

 

Hyperfine-mediated transitions between electronic spin-1/2 levels of transition metal defects in SiC

Carmem M. Giladroni, Irina Ion, Freddie Hendriks, Michael Trupke, Caspar H. van der Wal

New J. Phys. 23, 083010 (2021).

 

Hyperfine Structure of Transition Metal Defects in SiC
Benedikt Tissot, Guido Burkard

Phys. Rev. B 104, 064102 (2021).

 

High finesse microcavities in the optical telecom O-band
Jan Fait, Stefan Putz, Georg Wachter, Johannes Schalko, Ulrich Schmid, Markus Arndt, Michael Trupke

arXiv:2104.02813 (2021).

 

Towards Identification of silicon vacancy-related electron paramagnetic resonance centers in 4H SiC

A. Csòrè, N. T. Son, A. Gali

Phys. Rev. B 104, 035207 (2021).

 

Quantum guidlines fof solid-state spin defects
Gary Wolfowicz, F. Joseph Hermans, Christopher P. Anderson, Shun Kanai, Hosung Seo, Adam Gali, Giulia Galli & David D. Awschalom

Nature Review Materials, 1-20 (2021).

Narrow inhomogeneous distribution of spin-active emitters in silicon carbide

Roland Nagy, Durga Bhaktavatsala Rao Dasari, Charles Babin, Di Liu, Vadim Vorobyov, Matthias Niethammer, Matthias Widmann, Tobias Linkewitz, Rainer Stöhr, Heiko B. Weber, Takeshi Ohshima, Misagh Ghezellou, Nguyen Tien Son, Jawad Ul-Hassan, Florian Kaiser, and Jörg Wrachtrup

Appl. Phys. Lett. 118, 144003 (2021).

 

Dipolar spin relaxation of divacancy qubits in silicon carbide

O. B. Lindvall, N.T. Son, I.A. Abrikosov, and V. Ivády

Npj Computational Materials 7, 213 (2021).  

 

 

2020

 

Ab initio determination of pseudospin for paramagnetic defects in SiC
András Csóré and Adam Gali

Phys. Rev. B 102, 241201(R)(2020)

 

Spin-controlled generation of indistinguishable and distinguishable photons from silicon vacancy centres in silicon carbide
Naoya Morioka, Charles Babin, Roland Nagy, Izel Gediz, Erik Hasselmeier, Di Liu, Matthew Joliffe, Matthias Niethammer, Durga Dasari,  Vadim Vorobyov, Roman Kolesov, Rainer Stöhr, Jawad Ul-Hassan, Nguyen Tien Son, Takeshi Ohshima, Pèter Udvarhelui, Gergö Thiering, Adam Gali, Jörg Wrachtrup & Florian Kaiser

Nature Communications 11, 2516 (2020)

 

Room-temperature coherent control of implanted defect spins in silicon carbide

Fei-Fei Yan, Ai-Lun Yi, Jun-Feng Wang, Qiang Li, Pei Yu, Jia-Xiang Zhang, Adam Gali, Ya Wang, Jin-Shi Xu, Xin Ou, Chuang-Feng Li, and Guang-Can Guo

npj Quantum Information 6, 38 (2020)

 

Material platforms for defect qubits and single-photon emitters
Gang Zhang, Yuan Cheng, Juh-Pin Chou, and Adam Gali

Appl. Phys. Rev. 7, 031308 (2020)

 

Vibronic States and Their Effect on the Temperature and Strain Dependence of Silicon-Vacancy Qubits in 4H-SiC

Pèter Udvarhelui, Gergö Thiering, Naoya Morioka, Charles Babin, Florian Kaiser, Daniil Lukin, Takeshi Ohshima, Jawad Ul-Hassan, Nguyen Tien Son, Jelena Vučković, Jörg Wrachtrup, and Adam Gali

Phys. Rev. Applied 13, 054017 (2020)

 

Spectrally reconfigurable quantum emitters enabled by optimized fast modulation
Daniil M.Lukin, Alexander D. White, Rahul Trivedi, Melissa A. Guidry, Naoya Morioka, Charles Babin, Öney O.Soykal, Jawad Ul-Hassan, Nguyen Tien Son, Takeshi Ohshima, Praful K. Vasireddy, Mamdouh H. Nasr, Shuo Sun, Jean-Philippe W. MacLean, Constantin Dory, Emilio A. Nanni, Jörg Wrachtrup, Florian Kaiser, and Jelena Vučković
npj Quantum Information 6, 80 (2020).

 

Entanglement and control of single quantum memories in isotopically engineered silicon carbide
Alexandre Bourassa, Christopher P.Anderson, Kevin C. Miao, Mykyta Onizhuk, He Ma, Aleksander L. Crook, Hiroshi Abe, Jawad Ul-Hassan, Takeshi Ohshima, Nguyen T. Son, Giulia Galli, David D. Awschalom
Nature Materials (2020).

 

Developing silicon carbide for quantum spintronics
Nguyen T. Son, Christopher P. Anderson, Aleksandre Bourassa, Kevin C. Miao, Charles Babin, Matthias Widmann, Matthias Niethammer, Jawad Ul-Hassan, Naoya Morioka, Ivan G. Ivanov, Florian Kaiser, Jörg Wrachtrup and David D. Awschalom
Appl. Phys. Lett. 116, 190501 (2020).

 

Extending quibit coherence by adaptive quantum enviroment learning

Eleanor Scerri, Erik M Gauger, Cristian Bonato

New J. Phys., 22 035002 (2020)

 

Spectrally Stable Defect Qubits with no Inversion Symmetry for Robust Spin-To-Photon Interface
Péter Udvarhelyi, Roland Nagy, Florian Kaiser, Sang-Yun Lee, Jörg Wrachtrup, and Adam Gali
Physical Review Applied 11 044022 (2019).A. Csóré et al., Phys. Rev. B 105, 165108 (2022)

 

 

2019

 

Spin-relaxation times exceeding seconds for color centres with strong spin-orbit coupling in SiC
Carmem M. Gilardoni, Tom Bosma, Danny van Hien, Freddie Hendriks, Björn Magnusson, Aleksandre Ellison, Ivan G. Ivanov, N. T. Son and Caspar H. van der Wal
arXiv:1912.04612 (2019).
Published in:
New J. Phys. 22, 103051 (2020).